Proceedings Paper
40-Gb/s IC and packaging technologies for future lightwave communications| Format | Member Price | Non-Member Price |
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Paper Abstract
This paper reviews recent advances made at our laboratories in device, circuit-design, and module-design technologies for future very-high-speed lightwave communications. ICs and modules developed using 0.1 micrometer gate-length InAlAs/InGaAs HEMTs demonstrate promising performance suited to 40-Gb/s applications.
Paper Details
Date Published: 10 April 1997
PDF: 12 pages
Proc. SPIE 3038, High-Speed Semiconductor Lasers for Communication, (10 April 1997); doi: 10.1117/12.271459
Published in SPIE Proceedings Vol. 3038:
High-Speed Semiconductor Lasers for Communication
Norman S. Kwong; Radhakrishnan Nagarajan, Editor(s)
PDF: 12 pages
Proc. SPIE 3038, High-Speed Semiconductor Lasers for Communication, (10 April 1997); doi: 10.1117/12.271459
Show Author Affiliations
Yuhki Imai, NTT System Electronics Labs. (Japan)
Taiichi Otsuji, NTT System Electronics Labs. (Japan)
Taiichi Otsuji, NTT System Electronics Labs. (Japan)
Eiichi Sano, NTT System Electronics Labs. (Japan)
Yohtaro Umeda, NTT System Electronics Labs. (Japan)
Yohtaro Umeda, NTT System Electronics Labs. (Japan)
Published in SPIE Proceedings Vol. 3038:
High-Speed Semiconductor Lasers for Communication
Norman S. Kwong; Radhakrishnan Nagarajan, Editor(s)
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