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Proceedings Paper

Improvement of avalanche photodetectors through integration of InGaAs and Si
Author(s): Aaron R. Hawkins; Weishu Wu; John Edward Bowers
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Paper Abstract

Near infrared avalanche photodetectors have been constructed by wafer fusing epitaxial layers of InGaAs to Si. This integration combines the light absorption properties of InGaAs with the avalanche multiplication properties of Si. We concentrate here on two of the advantages these detectors have: desirable gain sensitivity properties, and high gain- bandwidth-products which would make them ideal for optical communication applications. Measurements are shown that illustrate very gradual gain increases with increasing device voltages as well as gain-bandwidth-products of over 300 GHz.

Paper Details

Date Published: 15 April 1997
PDF: 10 pages
Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271213
Show Author Affiliations
Aaron R. Hawkins, Univ. of California/Santa Barbara (United States)
Weishu Wu, Univ. of California/Santa Barbara (United States)
John Edward Bowers, Univ. of California/Santa Barbara (United States)

Published in SPIE Proceedings Vol. 2999:
Photodetectors: Materials and Devices II
Gail J. Brown; Manijeh Razeghi, Editor(s)

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