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Proceedings Paper

Growth of III-nitrides for photodetector applications
Author(s): Ian T. Ferguson; Chuong A. Tran; Robert F. Karlicek Jr.; Zhe Chuan Feng; Richard A. Stall; Shaohua Liang; W. Cai; Yuxin Li; Y. Liu; Y. Lu
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Paper Abstract

Interdigital metal-semiconductor-metal (MSM) and p-n UV photodetectors have been successfully grown and fabricated from GaN based materials. The MSM devices were produced using two types of GaN; high-resistive GaN and Mg doped GaN. For the high-resistive GaN detector, the lowest dark current is approximately 0.1 nA and the UV responsivity of the device was about 460 A/W at a DC bias of 30 V. The Mg doped GaN exhibited larger gains, 1150 A/W at 2.0 V, but at much higher dark currents, 400 nA. The high gain in this device is not well understood but has attributed to an 'avalanche' effect and is under further investigation. The feasibility of a photovoltage detector structure based on alloys of GaN has also been proven. A GaN/GaInN structure exhibited a cut- off at 2.9 eV with a responsivity of 0.28 A/W at zero bias for an active region of only 500 angstrom thick.

Paper Details

Date Published: 15 April 1997
PDF: 8 pages
Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271209
Show Author Affiliations
Ian T. Ferguson, EMCORE Corp. (United States)
Chuong A. Tran, EMCORE Corp. (United States)
Robert F. Karlicek Jr., EMCORE Corp. (United States)
Zhe Chuan Feng, EMCORE Corp. (United States)
Richard A. Stall, EMCORE Corp. (United States)
Shaohua Liang, Rutgers Univ. (United States)
W. Cai, Rutgers Univ. (United States)
Yuxin Li, Rutgers Univ. (United States)
Y. Liu, Rutgers Univ. (United States)
Y. Lu, Rutgers Univ. (United States)

Published in SPIE Proceedings Vol. 2999:
Photodetectors: Materials and Devices II
Gail J. Brown; Manijeh Razeghi, Editor(s)

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