Proceedings Paper
Photodetectors of slit and sandwich types based on CdS and CdS1-xSex films obtained using MOCVD method from dithiocarbamates| Format | Member Price | Non-Member Price |
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Paper Abstract
Here we report the results of working out an original, simple in control and not requiring expensive equipment MOCVD-method for depositing films of semiconductor compounds A2B6. Dithiocarbamates (DTC) are used as starting materials. The compounds are stable, easily synthesized, cheap and low toxic. Atoms of metal and sulfur in the DTC are strongly bonded. The DTC could be easily dissolved in various organic solvents. The experimental unit for film deposition comprises a spraying apparatus, a substrate heater, and a quartz cylinder for separation of a reaction zone from ambience. The process of film deposition is carried out in air conditions. Films of CdS, bright-yellow, transparent, having mirror smooth surface at thickness less than 2 mkm and rough surface at thickness 8-12 mkm, were deposited by spraying cadmium dithiocarbamate, that is DTC with radical C2H5, solution in pyridine on substrates heated to 240-280 degrees C. Deposition rate was 60-90 nm/min. Films obtained were of hexagonal modification, polycrystalline, textured, with low, at the level of centipercents content of oxygen and carbon. Slit type photodetectors based on CdS and CdS1-xSex of 1.0 mkm thickness have dark conductivity (sigma) d equals 10-9 divided by 10-8 Ohm-1cm-1 and photoconductivity (sigma) ph equals 10-2 divided by 10-1 Ohm-1cm-1 at 200 lux. Industrially suitable technology for production of photopotentiometer on the base of these films was developed. Sandwich-type photodetectors In2S3 - CdS: Cu, Cl - In with 8-12 mkm thickness have the same value of photoconductivity and the light-to-dark ratio is 106 divided by 107. Based on sandwich-type photodetectors, a hybrid structure of pyroelectric-photodetector as a resonant-type coordinate-sensitive detector was developed.
Paper Details
Date Published: 15 April 1997
PDF: 8 pages
Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271194
Published in SPIE Proceedings Vol. 2999:
Photodetectors: Materials and Devices II
Gail J. Brown; Manijeh Razeghi, Editor(s)
PDF: 8 pages
Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271194
Show Author Affiliations
Ludmila V. Zavyalova, Institute of Semiconductor Physics (Ukraine)
Sergey V. Svechnikov, Institute of Semiconductor Physics (Ukraine)
Sergey V. Svechnikov, Institute of Semiconductor Physics (Ukraine)
Vladimir G. Tchoni, Institute of Semiconductor Physics (Ukraine)
Published in SPIE Proceedings Vol. 2999:
Photodetectors: Materials and Devices II
Gail J. Brown; Manijeh Razeghi, Editor(s)
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