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Proceedings Paper

Monolithic InGaAs-on-silicon shortwave infrared detector arrays
Author(s): Abhay M. Joshi; Rene Brown; Eugene A. Fitzgerald; Xinde Wang; Steve M. Ting; Mayank T. Bulsara
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Paper Abstract

We have designed and developed 1, 16, 256, and 512 element linear monolithic InGaAs-on-silicon infrared detector array for the 1-3 micrometers SWIR band. A methodology of monolithically integrating InGaAs photodetectors and high density complex CMOS readout electronics all on a single silicon substrate has been developed. The innovation consists of an improved 'selective' epitaxial technique that significantly reduces the misfit dislocation density caused by the severe lattice mismatch between the InxGa1-xAs photodetector's absorption region and the silicon substrate. The individual pixel size of (40 X 40) and (80 X 80) micrometers 2 exhibits room temperature RoA product of 40 to 45 (Omega) - cm2. The InGaAs photodetectors are operated at a zero bias voltage to eliminate leakage current integration, reduce the 1/f noise, and maintain a uniform bias for light detection. The CMOS readout circuitry for each individual pixel consists of an integrating pre-amplifier, a CDS signal processor, and a voltage to current converter. The column scanner for the linear array is a D type shift register with a master clear signal reset once per frame. The master clock signal shifts the bit through the registers one column per clock cycle. When a pixel is selected, the output signal at the voltage to current converter is coupled to a transimpedance amplifier. This amplifier drives the line capacitance of the output bus line to achieve 25 MHz output speed. Power dissipation of less than 100 mW has been demonstrated for 10 MHz operation.

Paper Details

Date Published: 15 April 1997
PDF: 14 pages
Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271192
Show Author Affiliations
Abhay M. Joshi, Discovery Semiconductors, Inc. (United States)
Rene Brown, Discovery Semiconductors, Inc. (United States)
Eugene A. Fitzgerald, Massachusetts Institute of Technology (United States)
Xinde Wang, Discovery Semiconductors, Inc. (United States)
Steve M. Ting, Massachusetts Institute of Technology (United States)
Mayank T. Bulsara, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 2999:
Photodetectors: Materials and Devices II
Gail J. Brown; Manijeh Razeghi, Editor(s)

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