We present experimental and numerical simulation results on the noise levels generated in hydrogenated amorphous silicon PIN diodes. THe diodes have the tow structures forming a PIXEL arrangement.A parallel study is developed to compare the noise sources and to precise their location. Firstly we have led the analysis and the modelization of voltage - current curves separately for PIN and NIP diodes. The electrical model valid for both structures is designed. Secondly the noise for these structures is examined for the frequency range from 10Hz to 200kHz. Three different noise generators are extracted from analysis of the spectra. It is shown, that shot noise, 1/f noise and f^-1/2 noise sources are present in the dark forward current. The model to explain white noise levels in designed and its validity is verified by experimental data. The dominant typical noise generator for the hydrogenated amorphous semiconductor takes the form of f^-1/2 spectra, it is discussed as noise source which is formed by the composition of trap noise generators placed in the intrinsic layer and near the interface N⁺N^-.

Date Published: 15 April 1997
PDF: 10 pages
Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271190

Published in SPIE Proceedings Vol. 2999:
Photodetectors: Materials and Devices II
Gail J. Brown; Manijeh Razeghi, Editor(s)