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Proceedings Paper

MSM-photodetectors with corrugated metal-semiconductor-interface based on III-V semiconductors
Author(s): Nikolas L. Dmitruk; Olga Yu. Borkovskaya; Olga I. Mayeva; Sergey V. Mamikin; Oxana B. Yastrubchak
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Paper Abstract

The results of investigation for two types of GaAs(InP) based MSM photodetectors are described: 1) on quasiperiodical surfaces as light radiation detectors with enhanced photosensitivity throughout the spectral sensitivity range of device; 2) on holographic gratings as detectors having selective sensitivity respect to wavelength, polarization and incidence angle of light. The electrophysical parameters of Au(Ag)-GaAs(InP) MSM- photodetectors - current transport mechanism, interface recombination velocity, minority carrier diffusion length etc. - the spectral, angular, and polarization characteristics of their photosensitivity have been determined. Surface plasmon polariton excitation is shown to be an additional mechanism of photosensitivity enhancement for MSM photodetectors with corrugated surface. The passivation of corrugated surfaces in aqueous solution of sulfides was used for further improvement of photodetector sensitivity. The optimum regimes of chemical processing of texturation and passivation have been determined.

Paper Details

Date Published: 15 April 1997
PDF: 7 pages
Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271172
Show Author Affiliations
Nikolas L. Dmitruk, Institute for Physics of Semiconductors (Ukraine)
Olga Yu. Borkovskaya, Institute for Physics of Semiconductors (Ukraine)
Olga I. Mayeva, Institute for Physics of Semiconductors (Ukraine)
Sergey V. Mamikin, Institute for Physics of Semiconductors (Ukraine)
Oxana B. Yastrubchak, Institute for Physics of Semiconductors (Ukraine)

Published in SPIE Proceedings Vol. 2999:
Photodetectors: Materials and Devices II
Gail J. Brown; Manijeh Razeghi, Editor(s)

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