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Proceedings Paper

Er-doped fluoride glass films by MOCVD for waveguide devices
Author(s): Chia-Yen Li; Vladimir Fuflyigin; Jing Zhao; Xuesheng Chen; Seppo Honkanen; Nasser Peyghambarian
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Paper Abstract

We report on the growth of erbium doped ZrF4-LaF3- BaF2 glass films by metalorganic chemical vapor deposition (MOCVD) for the construction of planar waveguide devices. Our process provides the growth of high quality, uniform in thickness, and continuous films on a wide variety of common substrates. A protective layer of MgF2 was deposited in-situ onto the Er-doped glass films under the same CVD deposition conditions. The luminescence of Er around 1.55 micrometers was observed in films on all the substrates used. The emission line shapes are the same as those observed from Er-doped fluorozirconate glass. MOCVD proved to be a feasible technology to grow rare-earth doped fluoride films for planar waveguide devices.

Paper Details

Date Published: 2 May 1997
PDF: 6 pages
Proc. SPIE 2996, Rare-Earth-Doped Devices, (2 May 1997); doi: 10.1117/12.271145
Show Author Affiliations
Chia-Yen Li, NZ Applied Technologies (United States)
Vladimir Fuflyigin, NZ Applied Technologies (United States)
Jing Zhao, NZ Applied Technologies (United States)
Xuesheng Chen, Wheatton College (United States)
Seppo Honkanen, Optical Sciences Ctr./Univ. of Arizona (United States)
Nasser Peyghambarian, Optical Sciences Ctr./Univ. of Arizona (United States)

Published in SPIE Proceedings Vol. 2996:
Rare-Earth-Doped Devices
Seppo Honkanen, Editor(s)

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