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Proceedings Paper

Wafer-bonded AlGaInAs 1.3-um vertical-cavity surface-emitting lasers
Author(s): Yi Qian; Zuhua Zhu; Yu-Hwa Lo; Hong Q. Hou; B. Eugene Hammons; Diana L. Huffaker; Dennis G. Deppe; Wei Lin; Mingcheng Wang; Y. K. Yu
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Paper Abstract

Wafer-bonded AlAs/GaAs mirrors and AlGaInAs strain- compensated multiple quantum well active layers have been applied into 1.3 micrometer vertical-cavity surface-emitting lasers (VCSELs). Double-bonded 1.3 micrometer VCSELs have operated at room temperature pulsed conditions with a high output power of 4.6 mW, a high characteristic temperature of 132 K, and a large side-mode suppression-ratio of 42 dB. A novel more practical approach for 1.3 micrometer VCSELs have been proposed and demonstrated a very low room temperature pulsed threshold current density of 1.13 kA/cm2 and a very low threshold current of 2 mA. Further improvement focusing on practical approaches for long wavelength VCSELs is underway.

Paper Details

Date Published: 4 April 1997
PDF: 8 pages
Proc. SPIE 3003, Vertical-Cavity Surface-Emitting Lasers, (4 April 1997);
Show Author Affiliations
Yi Qian, Cornell Univ. (United States)
Zuhua Zhu, Cornell Univ. and Zhejiang Univ. (United States)
Yu-Hwa Lo, Cornell Univ. (United States)
Hong Q. Hou, Sandia National Labs. (United States)
B. Eugene Hammons, Sandia National Labs. (United States)
Diana L. Huffaker, Univ. of Texas/Austin (United States)
Dennis G. Deppe, Univ. of Texas/Austin (United States)
Wei Lin, Chunghwa Telecom Co. (Taiwan)
Mingcheng Wang, Chunghwa Telecom Co. (Taiwan)
Y. K. Yu, Chunghwa Telecom Co. (Taiwan)

Published in SPIE Proceedings Vol. 3003:
Vertical-Cavity Surface-Emitting Lasers
Kent D. Choquette; Dennis G. Deppe, Editor(s)

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