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Proceedings Paper

Relevance of the GaN yellow luminescence for light-emitting diodes
Author(s): W. Grieshaber; E. Fred Schubert; Robert F. Karlicek Jr.; Matthew J. Schurman; Chuong A. Tran
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Paper Abstract

The competition between bandgap and the 2.2 eV yellow luminescence of epitaxial GaN is studied for excitation densities ranging from 5 X 10-6 W/cm-2 to 50 W/cm-2. The ratio of the peak intensities of the bandgap-to-yellow luminescence changes from 4 to 1 to 3000 to 1 as the excitation density is increased by seven orders of magnitude. At room temperature, the bandgap luminescence linewidth is 2.3kT, close to the theoretical minimum of 1.8kT. A model is developed describing the intensity of the two radiative transitions as a function of the excitation density. The theoretically predicted dependences of the two different luminescence channels follow power laws with exponents of 1/2, 1 and 3/2. The theoretical dependences are in excellent agreement with experimental results. It is shown that the intensity of the yellow luminescence line is negligibly small at typical injection currents of light- emitting diodes.

Paper Details

Date Published: 4 April 1997
PDF: 8 pages
Proc. SPIE 3002, Light-Emitting Diodes: Research, Manufacturing, and Applications, (4 April 1997); doi: 10.1117/12.271049
Show Author Affiliations
W. Grieshaber, Boston Univ. (United States)
E. Fred Schubert, Boston Univ. (United States)
Robert F. Karlicek Jr., EMCORE Corp. (United States)
Matthew J. Schurman, EMCORE Corp. (United States)
Chuong A. Tran, EMCORE Corp. (United States)

Published in SPIE Proceedings Vol. 3002:
Light-Emitting Diodes: Research, Manufacturing, and Applications
E. Fred Schubert, Editor(s)

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