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Proceedings Paper

Anomalous interface degradation of a-Si:H TFTs during LCD lifetime
Author(s): Frank R. Libsch; Takatoshi Tsujimura
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Paper Abstract

In this paper, we present some unpublished results for the first time, on an anomalous a-Si:H/SiNx interface degradation that is to a first order, independent of increasing temperature stress. This interface degradation produces significant impact on the linear region drain current and the ability to charge the pixel capacitance during the gate access time. This anomalous behavior can only be explained by an electric field coupled two carrier transport mechanism occuring at the two interfaces of the gate dielectric. The experimental and modeling results to be discussed in this paper clearly shows that if metastable defect creation is suspect of being present, then the far majority of the threshold voltage shift observed here is dominated by charge injection and transport in the gate insulator.

Paper Details

Date Published: 10 April 1997
PDF: 9 pages
Proc. SPIE 3014, Active Matrix Liquid Crystal Displays Technology and Applications, (10 April 1997); doi: 10.1117/12.270300
Show Author Affiliations
Frank R. Libsch, IBM Thomas J. Watson Research Ctr. (United States)
Takatoshi Tsujimura, IBM Japan Ltd. (Japan)

Published in SPIE Proceedings Vol. 3014:
Active Matrix Liquid Crystal Displays Technology and Applications
Tolis Voutsas; Tsu-Jae King, Editor(s)

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