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Proceedings Paper

High-electric-field phenomena in polycrystalline silicon thin film transistors
Author(s): Guglielmo Fortunato; R. Carluccio; L. Colalongo; S. Giovannini; L. Mariucci; F. Massussi; M. Valdinoci
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Paper Abstract

Polysilicon thin-film transistors are of great interest for their application in large area microelectronics and especially for their circuit applications. A successful circuit design requires a proper understanding of the electrical characteristics and in the present work some specific aspects related to the presence of high electric fields at the drain end of the channel are presented.

Paper Details

Date Published: 10 April 1997
PDF: 12 pages
Proc. SPIE 3014, Active Matrix Liquid Crystal Displays Technology and Applications, (10 April 1997); doi: 10.1117/12.270290
Show Author Affiliations
Guglielmo Fortunato, Istituto di Elettronica dello Stato Solido/CNR (Italy)
R. Carluccio, Istituto di Elettronica dello Stato Solido/CNR (Italy)
L. Colalongo, Univ. di Bologna (Italy)
S. Giovannini, Istituto di Elettronica dello Stato Solido/CNR (Italy)
L. Mariucci, Istituto di Elettronica dello Stato Solido/CNR (Italy)
F. Massussi, Istituto di Elettronica dello Stato Solido/CNR (Italy)
M. Valdinoci, Univ. di Bologna (Italy)


Published in SPIE Proceedings Vol. 3014:
Active Matrix Liquid Crystal Displays Technology and Applications
Tolis Voutsas; Tsu-Jae King, Editor(s)

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