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Proceedings Paper

Low-temperature activation method of poly-Si films using rapid thermal annealing
Author(s): Kiichi Hirano; Naoya Sotani; Isao Hasegawa; Tomoyuki Nohda; Hisashi Abe; Hiroki Hamada
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Paper Abstract

Doped polysilicon (poly-Si) films with a low resistivity have been successfully obtained at a low temperature using novel processing technology, which was combined with the rapid thermal annealing (RTA) and ion-doping methods. P- doped poly-Si films with a sheet resistance of 3k(Omega) /$DAL were achieved with a process temperature 220 degrees C lower than that of the conventional process which combined the RTA and ion implantation methods. The uniformity of sheet resistance for P-doped poly-Si films prepared by the novel process was better that for the excimer laser annealing. The threshold voltage, subthreshold swing and field effect mobility for n-channel thin film transistors with a lightly doped drain structure using the novel process were 2.0V, 0.3V/dec., and 70cm2/V s, respectively.

Paper Details

Date Published: 10 April 1997
PDF: 8 pages
Proc. SPIE 3014, Active Matrix Liquid Crystal Displays Technology and Applications, (10 April 1997); doi: 10.1117/12.270285
Show Author Affiliations
Kiichi Hirano, Sanyo Electric Co., Ltd. (Japan)
Naoya Sotani, Sanyo Electric Co., Ltd. (Japan)
Isao Hasegawa, Sanyo Electric Co., Ltd. (Japan)
Tomoyuki Nohda, Sanyo Electric Co., Ltd. (Japan)
Hisashi Abe, Sanyo Electric Co., Ltd. (Japan)
Hiroki Hamada, Sanyo Electric Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 3014:
Active Matrix Liquid Crystal Displays Technology and Applications
Tolis Voutsas; Tsu-Jae King, Editor(s)

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