Doped polysilicon (poly-Si) films with a low resistivity have been successfully obtained at a low temperature using novel processing technology, which was combined with the rapid thermal annealing (RTA) and ion-doping methods. P- doped poly-Si films with a sheet resistance of 3k(Omega) /$DAL were achieved with a process temperature 220 degrees C lower than that of the conventional process which combined the RTA and ion implantation methods. The uniformity of sheet resistance for P-doped poly-Si films prepared by the novel process was better that for the excimer laser annealing. The threshold voltage, subthreshold swing and field effect mobility for n-channel thin film transistors with a lightly doped drain structure using the novel process were 2.0V, 0.3V/dec., and 70cm²/V s, respectively.

Date Published: 10 April 1997
PDF: 8 pages
Proc. SPIE 3014, Active Matrix Liquid Crystal Displays Technology and Applications, (10 April 1997); doi: 10.1117/12.270285

Published in SPIE Proceedings Vol. 3014:
Active Matrix Liquid Crystal Displays Technology and Applications
Tolis Voutsas; Tsu-Jae King, Editor(s)