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Proceedings Paper

Characteristics of excimer-laser-annealed polysilicon films for application in polysilicon thin film transistor devices
Author(s): Apostolos T. Voutsas; Aaron Marmorstein; Rajendra Solanki
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Paper Abstract

In this work we have investigated the crystallization of PECVD as-deposited amorphous silicon films by excimer laser anneal. A lambda-physik XeCl excimer laser was used to produce thin polysilicon films under a variety of operating conditions. The effect of process parameters, such as laser energy density, substrate temperature and annealing ambient was investigated with respect to the grain size and surface roughness of the crystallized films. It was found that annealing in rough vacuum, at a substrate temperature of 450 degrees C and with an energy density of 270mJ/cm2 resulted in films with an average grain size of 0.5micrometers and surface roughness of 6nm. It was shown that by introducing a two-step anneal, the distribution of the grain size could be improved with a small compromise in the average grain size. The annealing ambient was shown to significantly affect the surface roughness of the films, with O2-rich environments generally promoting the development of roughness. Incorporation of a barrier layer under the annealed film was shown to increase the grain size and, tat the same time, improve the resistance of the substrate to laser-induced roughening.

Paper Details

Date Published: 10 April 1997
PDF: 7 pages
Proc. SPIE 3014, Active Matrix Liquid Crystal Displays Technology and Applications, (10 April 1997); doi: 10.1117/12.270284
Show Author Affiliations
Apostolos T. Voutsas, Sharp Microelectronics Technology, Inc. (United States)
Aaron Marmorstein, Oregon Graduate Institute (United States)
Rajendra Solanki, Oregon Graduate Institute (United States)

Published in SPIE Proceedings Vol. 3014:
Active Matrix Liquid Crystal Displays Technology and Applications
Tolis Voutsas; Tsu-Jae King, Editor(s)

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