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Proceedings Paper

Effect of low-dose x-irradiation on light-emitting diodes Au-ZnS
Author(s): B. Pavlyk; B. Tsybulyak; Ya. Horyn'; M. Belov
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Paper Abstract

The influence of low-dose (up to 10 Cl/kg) underthreshold X- irradiation (Cu Kalpha, 20 - 40 kV, 20-40 mA) on physical parameters of surface-barrier diode structures Au- ZnS has been investigated. Barrier contacts have been fabricated by means of thermal deposition of Au in vacuum approximately 10-6 mm Hg on the chemical etched surface of ZnS(Al) single crystals. Ohmic contacts where made of In+10%Cd-alloy. I-V, C-V and G-V plots have been measured. Spectrum and kinetic parameters of deep levels (DL) in the forbidden band were studied by means of modulation capacitance spectroscopy (MCS). X-irradiation causes the decrease of shallow donor traps concentration in near-surface region of ZnS and the decrease of surface state (SS) effective density NSS in Au-ZnS contact. The radiation-stimulated changes in contact cannot be removed by the annealing. It has been stated that donor trap concentration and NSS reaches the saturation at exposure doses higher, than 3 Cl/kg. Creation of any new DLs in ZnS forbidden band has not been observed within the limits of the exposure doses investigated. The changes of the DL kinetic parameters and their profiles after irradiation can be explained by the radiation-stimulated decrease of NSS.

Paper Details

Date Published: 6 February 1997
PDF: 4 pages
Proc. SPIE 2968, Optical Organic and Semiconductor Inorganic Materials, (6 February 1997); doi: 10.1117/12.266826
Show Author Affiliations
B. Pavlyk, Lviv State Univ. (Ukraine)
B. Tsybulyak, Lviv State Univ. (Ukraine)
Ya. Horyn', Lviv State Univ. (Ukraine)
M. Belov, Lviv State Univ. (Ukraine)

Published in SPIE Proceedings Vol. 2968:
Optical Organic and Semiconductor Inorganic Materials
Edgar A. Silinsh; Arthur Medvids; Andrejs R. Lusis; Andris O. Ozols, Editor(s)

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