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Proceedings Paper

Photoconductivity formation in CdTe in the annealing process
Author(s): Jaan Hiie; Vello Valdna; Enn Mellikov; Mare Altosaar
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Paper Abstract

Results on the influence of annealing in vacuum and in Te vapors to the dark and light resistance's (RD and RL) of CdTe:Cl miniature crystals (300 - 400 micrometer) of monograin powders is reported and discussed. The dark to light resistance ratio 105 (RD equals 1011 (Omega) ) at incandescent light intensity of 104 1x at room temperature have been obtained for 400 micrometer size CdTe:Cl round-shape monograins. Process of annealing was found to shrink the porous structure of as-grown CdTe monograins and to smooth the crystal surfaces.

Paper Details

Date Published: 6 February 1997
PDF: 6 pages
Proc. SPIE 2968, Optical Organic and Semiconductor Inorganic Materials, (6 February 1997); doi: 10.1117/12.266820
Show Author Affiliations
Jaan Hiie, Tallinn Technical Univ. (Estonia)
Vello Valdna, Tallinn Technical Univ. (Estonia)
Enn Mellikov, Tallinn Technical Univ. (Estonia)
Mare Altosaar, Tallinn Technical Univ. (Estonia)

Published in SPIE Proceedings Vol. 2968:
Optical Organic and Semiconductor Inorganic Materials
Edgar A. Silinsh; Arthur Medvids; Andrejs R. Lusis; Andris O. Ozols, Editor(s)

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