Proceedings Paper
Photoconductivity formation in CdTe in the annealing process| Format | Member Price | Non-Member Price |
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Paper Abstract
Results on the influence of annealing in vacuum and in Te vapors to the dark and light resistance's (RD and RL) of CdTe:Cl miniature crystals (300 - 400 micrometer) of monograin powders is reported and discussed. The dark to light resistance ratio 105 (RD equals 1011 (Omega) ) at incandescent light intensity of 104 1x at room temperature have been obtained for 400 micrometer size CdTe:Cl round-shape monograins. Process of annealing was found to shrink the porous structure of as-grown CdTe monograins and to smooth the crystal surfaces.
Paper Details
Date Published: 6 February 1997
PDF: 6 pages
Proc. SPIE 2968, Optical Organic and Semiconductor Inorganic Materials, (6 February 1997); doi: 10.1117/12.266820
Published in SPIE Proceedings Vol. 2968:
Optical Organic and Semiconductor Inorganic Materials
Edgar A. Silinsh; Arthur Medvids; Andrejs R. Lusis; Andris O. Ozols, Editor(s)
PDF: 6 pages
Proc. SPIE 2968, Optical Organic and Semiconductor Inorganic Materials, (6 February 1997); doi: 10.1117/12.266820
Show Author Affiliations
Enn Mellikov, Tallinn Technical Univ. (Estonia)
Mare Altosaar, Tallinn Technical Univ. (Estonia)
Mare Altosaar, Tallinn Technical Univ. (Estonia)
Published in SPIE Proceedings Vol. 2968:
Optical Organic and Semiconductor Inorganic Materials
Edgar A. Silinsh; Arthur Medvids; Andrejs R. Lusis; Andris O. Ozols, Editor(s)
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