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Proceedings Paper

Photoemf of hot carriers in nonuniform GaAs
Author(s): Steponas P. Asmontas; Jonas Gradauskas; Dalius Seliuta; A. Silenas; Edmundas Sirmulis
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Paper Abstract

We report the results of a study of photovoltage which is generated on p-n and l-h GaAs structures under pulsed infrared laser excitation. The hot carrier photocurrent reaches its maximum value at bias voltage related to potential barrier height of p-n junction. We demonstrate that the photoresponse consists of fast and slow components which result from free-carrier and crystal lattice heating, respectively. The obtained results indicate that nonuniform GaAs structures can be used for fabrication of fast detectors based on free-carrier heating by infrared light.

Paper Details

Date Published: 6 February 1997
PDF: 6 pages
Proc. SPIE 2968, Optical Organic and Semiconductor Inorganic Materials, (6 February 1997); doi: 10.1117/12.266815
Show Author Affiliations
Steponas P. Asmontas, Institute of Semiconductor Physics (Lithuania)
Jonas Gradauskas, Institute of Semiconductor Physics (Lithuania)
Dalius Seliuta, Institute of Semiconductor Physics (Lithuania)
A. Silenas, Institute of Semiconductor Physics (Lithuania)
Edmundas Sirmulis, Institute of Physics (Lithuania)

Published in SPIE Proceedings Vol. 2968:
Optical Organic and Semiconductor Inorganic Materials
Edgar A. Silinsh; Arthur Medvids; Andrejs R. Lusis; Andris O. Ozols, Editor(s)

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