Share Email Print

Proceedings Paper

Optimization of properties of ion-sensitive amorphous silicon (a-Si:H) based transistors
Author(s): A. Kolodziej; Stanislaw Nowak; Wladislaw Torbicz; Dorota Pijanowska; P. Krewniak
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

In this work the application of a-Si:H thin film transistor technology in the field of chemical sensors is presented. In particularly, the optimization of magnetron deposition process for obtaining various silicon nitride films and TFT structures are described as well as adequate structures of Ion Sensitive Field Effect Transistor with respect to the ion sensitive hydrogen properties are studied. The device shows a good Nernst response and high reproducibility but not acceptable stability yet.

Paper Details

Date Published: 13 February 1997
PDF: 6 pages
Proc. SPIE 3054, Optoelectronic and Electronic Sensors II, (13 February 1997); doi: 10.1117/12.266708
Show Author Affiliations
A. Kolodziej, Univ. of Mining and Metallurgy (Poland)
Stanislaw Nowak, Univ. of Mining and Metallurgy (Poland)
Wladislaw Torbicz, Institute of Biocybernetics and Biomedical Engineering (Poland)
Dorota Pijanowska, Institute of Biocybernetics and Biomedical Engineering (Poland)
P. Krewniak, Univ. of Mining and Metallurgy (Poland)

Published in SPIE Proceedings Vol. 3054:
Optoelectronic and Electronic Sensors II
Zdzislaw Jankiewicz; Henryk Madura, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?