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Proceedings Paper

Theoretical and experimental studies on large-bandwidth 1.55-um integrated InP-based strained MQW laser-modulators
Author(s): Ram Jambunathan; Yahsing Yuan; Jasprit Singh; Pallab Bhattacharya
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Paper Abstract

The performance characteristics of an integrated InGaAsP/InP laser-modulator made by one step epitaxy and well-controlled reactive ion etching (RIE) have been analyzed and measured. A theoretical model based on a finite-difference time domain (FDTD) technique was used to simulate the propagation of a optical wave launched in the coupled system and determine the reflectivity of the facets created by RIE. The calculated effective reflectivity of the coupling region consisting of two facets and an air gap in between is 0.55, which is in a good agreement with the experimentally measured value of 0.5. The reflectivity of a single etched mirror derived from this value is estimated to be 0.3. A 120 micrometer long integrated modulator excited by the laser shows a maximum extinction ratio of 8 dB and a modulation bandwidth greater than or equal to 14 GHz at a dc bias of minus 0.5 V with a bias swing of 2 V. This is comparable to the best results reported for an integrated modulator.

Paper Details

Date Published: 22 January 1997
PDF: 11 pages
Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997);
Show Author Affiliations
Ram Jambunathan, Univ. of Michigan (United States)
Yahsing Yuan, Univ. of Michigan (United States)
Jasprit Singh, Univ. of Michigan (United States)
Pallab Bhattacharya, Univ. of Michigan (United States)

Published in SPIE Proceedings Vol. 3006:
Optoelectronic Integrated Circuits
Yoon-Soo Park; Ramu V. Ramaswamy, Editor(s)

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