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Proceedings Paper

Recent progress in AlGaN/GaN-based optoelectronic devices
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Paper Abstract

Unique optical and electronic properties of the InGaN/GaN/AlGaN material system open up numerous opportunities for visible-blind optoelectronic devices. GaN based optoelectronic devices include InGaN-AlGaN light emitting diodes (LEDs), GaN photoconductive, Schottky barrier, and p-n junction ultraviolet detectors, and optoelectronic AlGaN-GaN heterostructure field effect transistors. These devices have a high sensitivity and a large gain-bandwidth product and can be integrated with GaN/AlGaN field effect transistors which have already demonstrated an operation at microwave frequencies. GaN and related materials (which include AlN, InN, and AlGaN and InGaN solid state solutions) span the range from visible to UV. Since these are direct gap materials, they are better suited for optoelectronic applications than SiC polytypes. In this paper, we review our recent results on GaN based optoelectronic devices, which were obtained using a spinel substrate. GaN films grown on sapphire are rotated by 30 degrees with respect to the sapphire substrate. This makes it practically impossible to cleave parallel surfaces needed for GaN-based lasers, which have been using vertical cavity surface emission laser (VCSEL) design. The spinel (MgAl2O4) cubic (111) substrates have a common cleave direction with the grown GaN epilayer. These substrates have a smaller lattice mismatch (approximately 9%) with GaN, and we recently demonstrated that GaN layers deposited over these substrates have a similar or better quality compared to GaN layers grown on sapphire.

Paper Details

Date Published: 22 January 1997
PDF: 10 pages
Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); doi: 10.1117/12.264214
Show Author Affiliations
Mohamed Asif Khan, APA Optics, Inc. (United States)
Michael S. Shur, Univ. of Virginia (United States)

Published in SPIE Proceedings Vol. 3006:
Optoelectronic Integrated Circuits
Yoon-Soo Park; Ramu V. Ramaswamy, Editor(s)

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