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Proceedings Paper

Novel approach for integration of an AlGaAs/GaAs heterojunction bipolar transistor with an InGaAs quantum well laser
Author(s): Xiao-Ming Li; J. L. Jimenez; Michael J. Jurkovic; Wen I. Wang
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Paper Abstract

A novel approach for integration of an AlGaAs/GaAs double heterojunction bipolar transistor (D-HBT) with an InGaAs quantum well (QW) laser is demonstrated. The QW of the laser is incorporated within the lightly doped GaAs collector region of the HBT while the p+-base and n+- region of the collector are used compatibly as the electrodes of the laser diode, thus eliminating the need for an independent laser structure. Advantages of this approach include single-step molecular beam epitaxial (MBE) growth without the thermal cycling associated with sequential growth or selective regrowth techniques. In addition, elimination of wire interconnects and corresponding parasitics between the HBT collector and the laser diode enhance the performance of the HBT/laser diode circuit. HBTs with current gain as high as 60 and compatible InGaAs quantum well lasers with room temperature threshold current density as low as 500 A/cm2 have been successfully fabricated. Results demonstrate that the structure has potential for application in optoelectronic integrated circuits (OEICs), fiber optic communications, and optical interconnects.

Paper Details

Date Published: 22 January 1997
PDF: 8 pages
Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); doi: 10.1117/12.264210
Show Author Affiliations
Xiao-Ming Li, Columbia Univ. (United States)
J. L. Jimenez, Columbia Univ. (United States)
Michael J. Jurkovic, Columbia Univ. (United States)
Wen I. Wang, Columbia Univ. (United States)

Published in SPIE Proceedings Vol. 3006:
Optoelectronic Integrated Circuits
Yoon-Soo Park; Ramu V. Ramaswamy, Editor(s)

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