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Proceedings Paper

Monolithic integration of heterojunction bipolar transistors and quantum well modulators on InP: growth optimization
Author(s): Milson Tadeu Camargo Silva; Jane E. Zucker; Luiz R. Carrion; Charles H. Joyner; Andrew G. Dentai; Nicholas J. Sauer
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Paper Abstract

We demonstrate the necessary conditions for successful metalorganic vapor phase epitaxy (MOVPE) growth of InGaAs/InP-based heterojunction bipolar transistor (HBT) layers on P-I-N InGaAsP/InGaAsP quantum well (QW) modulators. Optimization of the doping profile in the uppermost P-cladding layer of the modular stack was achieved to obtain suitable junction placement after the final HBT growth. Electron beam induced current (EBIC) traces, photoluminescence, scanning electron microscope photographs, photocurrent spectra of etched diode mesas were utilized to study this process.

Paper Details

Date Published: 22 January 1997
PDF: 8 pages
Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); doi: 10.1117/12.264209
Show Author Affiliations
Milson Tadeu Camargo Silva, Univ. de Sao Paulo (Brazil)
Jane E. Zucker, Lucent Technologies Bell Labs. (United States)
Luiz R. Carrion, Lucent Technologies Bell Labs. (United States)
Charles H. Joyner, Lucent Technologies Bell Labs. (United States)
Andrew G. Dentai, Lucent Technologies Bell Labs. (United States)
Nicholas J. Sauer, Lucent Technologies Bell Labs. (United States)

Published in SPIE Proceedings Vol. 3006:
Optoelectronic Integrated Circuits
Yoon-Soo Park; Ramu V. Ramaswamy, Editor(s)

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