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Proceedings Paper

Ion implantation in Gallium Arsenide MESFET technology
Author(s): Joel Pereira de Souza; Devindra K. Sadana
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Paper Abstract

This review emphasizes controlled shallow doping of GaAs by ion implantation and its limitations to the state-of-art GaAs IC technology. It discusses the electrical activation behavior of implanted silicon in GaAs upon subsequent capless or silicon nitride capped rapid thermal annealing (RTA). It is demonstrated that atomic H diffuses into the implanted region of GaAs during PECVD of a Si3N4 cap and the H retards the electrical activation kinetics of the implanted Si. Applications of ion implantation to achieve buried-p layers as well as isolation between neighboring devices in GaAs are also briefly discussed.

Paper Details

Date Published: 1 November 1990
PDF: 15 pages
Proc. SPIE 1405, 5th Congress of the Brazilian Society of Microelectronics, (1 November 1990); doi: 10.1117/12.26299
Show Author Affiliations
Joel Pereira de Souza, Univ. Federal do Rio Grande do Sul (Brazil)
Devindra K. Sadana, IBM/Thomas J. Watson Research (United States)

Published in SPIE Proceedings Vol. 1405:
5th Congress of the Brazilian Society of Microelectronics
Vitor Baranauskas, Editor(s)

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