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Proceedings Paper

Mask fabrication rules for proximity-corrected patterns
Author(s): Michael L. Rieger; John P. Stirniman
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Paper Abstract

Optical proximity correction (OPC) adds complex convolutions to mask pattern shapes which can stress mask-making capabilities. Because the `decorations'--jogs, serifs, assist features--created by proximity correction are approximations to `ideal' corrected shapes there are many variations of corrected mask shapes that provide the same result on the wafer. With an understanding of specific mask- making limitations it is possible to leverage this leeway to create more `mask friendly' patterns with OPC.

Paper Details

Date Published: 27 December 1996
PDF: 10 pages
Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); doi: 10.1117/12.262815
Show Author Affiliations
Michael L. Rieger, Precim Co. (United States)
John P. Stirniman, Precim Co. (United States)


Published in SPIE Proceedings Vol. 2884:
16th Annual BACUS Symposium on Photomask Technology and Management
Gilbert V. Shelden; James A. Reynolds, Editor(s)

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