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Proceedings Paper

Optimization of lithography and CD control using GHOST proximity correction with a MEBES 4500 system
Author(s): Robert L. Dean
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Paper Abstract

Experiments were initiated that examined parameters for optimum proximity effect correction using GHOST with 400 nm of PBS and the standard PBS process. Parameters examined included the size of the correction spot and the ratio of the correction dose to the primary dose. Critical dimension CD deviations from the mean in proximity tower patterns were used to determine optimum parameters. Results show that without data bias, the minimum feature size that can be achieved with GHOST within +/- 5% of the mean CD at 10 keV and 400 nm of resist is 300 nm. The correction scheme begins to degrade rapidly with smaller features. CD control at optimum GHOST parameters can be achieved by introducing data bias of 100 nm per side of a line to account for the wet etch undercut in the PBS process. This effectively increases the minimum feature size achievable from 300 nm to 500 nm. A resist that can be dry etched, thereby eliminating the wet etch undercut, will alleviate this problem.

Paper Details

Date Published: 27 December 1996
PDF: 9 pages
Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); doi: 10.1117/12.262812
Show Author Affiliations
Robert L. Dean, Etec Systems, Inc. (United States)

Published in SPIE Proceedings Vol. 2884:
16th Annual BACUS Symposium on Photomask Technology and Management
Gilbert V. Shelden; James A. Reynolds, Editor(s)

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