Share Email Print

Proceedings Paper

Performance comparison of monolithic W-band singly balanced mixers utilizing GaAs HEMT and InP HBT technologies
Author(s): Eric W. Lin; Kwo Wei Chang; Huei Wang; Lap Tran; K. L. Tan
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We present measured data for three W-band singly-balanced mixers utilizing both GaAs pseudo-morphic HEMT and InP HBT device technologies, and critically compare their LO power requirements, and conversion loss and noise figure performance. Of the three distinct single-balanced mixers which were investigated, i.e. the GaAs HEMT and InP HBT Schottky-diode rat-race mixers and the dual quadrature resistive GaAs HEMT mixer, the InP HBT diode mixer exhibited the best noise figure at low intermediate frequencies and achieved good conversion loss performance with low LO drive requirements.

Paper Details

Date Published: 18 December 1996
PDF: 6 pages
Proc. SPIE 2842, Millimeter and Submillimeter Waves and Applications III, (18 December 1996);
Show Author Affiliations
Eric W. Lin, TRW, Inc. (United States)
Kwo Wei Chang, TRW, Inc. (United States)
Huei Wang, TRW, Inc. (United States)
Lap Tran, TRW, Inc. (United States)
K. L. Tan, TRW, Inc. (United States)

Published in SPIE Proceedings Vol. 2842:
Millimeter and Submillimeter Waves and Applications III
Mohammed N. Afsar, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?