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Proceedings Paper

Color-sensitive photodetectors in standard CMOS and BiCMOS technologies
Author(s): Mohamed Ben Chouikha; Guo Neng Lu; Mohamed Sedjil; Gerard Sou
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Paper Abstract

The authors present a novel technique for color detection by using a buried double pn junction (B.D.J.) and a buried triple pn junction (B.T.J.) structure. For the B.D.J. wavelength-dependent photocurrents I1 and I2 can be measured. The wavelength of monochromatic incident light can be identified from the ratio I2/I1. In the case of the B.T.J. with wavelength dependent photocurrents the three colorimetric components of the incident light can be extracted. These structures can be implemented in standard CMOS and BiCMOS technology respectively.

Paper Details

Date Published: 19 December 1996
PDF: 13 pages
Proc. SPIE 2950, Advanced Focal Plane Arrays and Electronic Cameras, (19 December 1996); doi: 10.1117/12.262515
Show Author Affiliations
Mohamed Ben Chouikha, Univ. de Paris VI (France) and Univ. de Paris VII (France)
Guo Neng Lu, Univ. de Paris VI (France) and Univ. de Paris VII (France)
Mohamed Sedjil, Univ. de Paris VI (France) and Univ. de Paris VII (France)
Gerard Sou, Univ. de Paris VI (France) and Univ. de Paris VII (France)


Published in SPIE Proceedings Vol. 2950:
Advanced Focal Plane Arrays and Electronic Cameras
Thierry M. Bernard, Editor(s)

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