Proceedings Paper
Novel planar electroabsorption waveguide modulator for rf applications| Format | Member Price | Non-Member Price |
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Paper Abstract
Planar electroabsorption InP/InGaAsP waveguide modulators suitable for RF applications have been fabricated using the photoelastic effect. The planar device structure is achieved by using WNi thin film surface stressors for lateral waveguiding and helium implantation for electrical isolation between devices. These are the first reported frequency measurements on a photoelastic InP/InGaAsP waveguide modulator.
Paper Details
Date Published: 22 November 1996
PDF: 6 pages
Proc. SPIE 2844, Photonics and Radio Frequency, (22 November 1996); doi: 10.1117/12.259023
Published in SPIE Proceedings Vol. 2844:
Photonics and Radio Frequency
Brian M. Hendrickson, Editor(s)
PDF: 6 pages
Proc. SPIE 2844, Photonics and Radio Frequency, (22 November 1996); doi: 10.1117/12.259023
Show Author Affiliations
Qizhi Z. Liu, Univ. of California/San Diego (United States)
Robert B. Welstand, Univ. of California/San Diego (United States)
Richard Joseph Orazi, Univ. of California/San Diego and Naval Command, Control and Ocean Surveillance Ctr. (United States)
Robert B. Welstand, Univ. of California/San Diego (United States)
Richard Joseph Orazi, Univ. of California/San Diego and Naval Command, Control and Ocean Surveillance Ctr. (United States)
Stephen A. Pappert, Univ. of California/San Diego and Naval Command, Control and Ocean Surveillance Ctr. (United States)
Paul K. L. Yu, Univ. of California/San Diego (United States)
S. S. Lau, Univ. of California/San Diego (United States)
Paul K. L. Yu, Univ. of California/San Diego (United States)
S. S. Lau, Univ. of California/San Diego (United States)
Published in SPIE Proceedings Vol. 2844:
Photonics and Radio Frequency
Brian M. Hendrickson, Editor(s)
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