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Proceedings Paper

Growth of oxide superconducting thin films by plasma-enhanced MOCVD
Author(s): Keiichi Kanehori; Nobuyuki Sugii
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Paper Abstract

The effects of plasma -enhancement on MOCVD for growing superconducting YBa2 Cu3 OX thin films is studied. It is revealed that plasma-enhancement accelerates crystal I ization of YBa 2 Cu 0 so that growth temperatures of superconducting fi Ims can be decreased by about 150 °C . Thin fi Ims grown by plasma-enhanced MOCVD at 515°C and 580°C indicate zero-resistivity temperatures of 60K and 84K, respectively. Critical current density in the film grown by plasma-enhanced MOCVD at 580 °C is 1O A/cm2 at 77K. Infrared absorption spectroscopy and ultraviolet and visible emission spectroscopy clarify that plasma excite the metalorganic compounds and that this excitation promotes oxidization of metalorgan ic compounds and crystal I izat ion of YBa2Cu3O.

Paper Details

Date Published: 1 March 1991
PDF: 6 pages
Proc. SPIE 1394, Progress In High-Temperature Superconducting Transistors and Other Devices, (1 March 1991); doi: 10.1117/12.25754
Show Author Affiliations
Keiichi Kanehori, Hitachi, Ltd. (Japan)
Nobuyuki Sugii, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 1394:
Progress In High-Temperature Superconducting Transistors and Other Devices
Rajendra Singh; Jagdish Narayan; David T. Shaw, Editor(s)

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