Share Email Print

Proceedings Paper

Epitaxial regrowth of silicon on sapphire by rapid isothermal processing
Author(s): R. Madarazo; A. G. Pedrine; Allison A. S. Sol; Vitor Baranauskas
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Silicon (100) films deposited by CVD and amorphized by ion implantation on (1102) sapphire wafers have been recrystallized by the use of Rapid-Isothermal-Processing at temperatures between 873 K to 1073 K for periods of 45to 540 S. The characterization of the regrowth was monitored by optical and infrared spectrometry. The crystallization was clearly observed in the above time range only for temperatures close to 1073 K. At this temperature for 2800 A films the measured crystallization rate was 10. 3 A/s. SIMS profile measurements showed that no diffusion of the impurities detected in the as-deposited film (such as 02 Al Mg Si30 C and Na) occurred in the film after the RIP regrowth. 1.

Paper Details

Date Published: 1 April 1991
PDF: 8 pages
Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); doi: 10.1117/12.25727
Show Author Affiliations
R. Madarazo, State Univ. of Campinas (Brazil)
A. G. Pedrine, State Univ. of Campinas (Brazil)
Allison A. S. Sol, State Univ. of Campinas (Brazil)
Vitor Baranauskas, State Univ. of Campinas (Brazil)

Published in SPIE Proceedings Vol. 1393:
Rapid Thermal and Related Processing Techniques
Rajendra Singh; Mehrdad M. Moslehi, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?