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Proceedings Paper

Low-resistivity contacts to silicon using selective RTCVD of germanium
Author(s): D. T. Grider; Mehmet C. Ozturk; Jim J. Wortman; Michael A. Littlejohn; Y. Zhong
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Paper Abstract

Isotype heterojunctions using low pressure rapid thermal chemical vapor deposition (RTCVD) of germanium on silicon have been fabricated and incorporated into a Kelvin structure to study the contact resistivity of the stacked structure. Germanium films were deposited at 400C and 3 Torr in a tungstenhalogen lamp heated rapid thermal processor utilizing a water cooled stainless-steel process chamber. In this work germanium is considered as a buffer layer to prevent silicon consumption over source/drain regions of MOS transistors during silicidation anneals to form low resistivity silicided contacts. We report here the results of our work with a germanium/silicon heterostructure and the potential advantages of this approach. Experimental results were compared against theoretical calculations and show that the Al/Ge/Si structure can lead to substantially lower contact resistivities than the Al/Si structure especially at lower substrate doping levels. This is especially pronounced in p-type contacts where 19 improvement in the contact resistance to silicon has been observed. Native oxide removal during the initial stages of germanium growth may play a key role in this reduction in contact resistivity.

Paper Details

Date Published: 1 April 1991
PDF: 11 pages
Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); doi: 10.1117/12.25708
Show Author Affiliations
D. T. Grider, North Carolina State Univ. (United States)
Mehmet C. Ozturk, North Carolina State Univ. (United States)
Jim J. Wortman, North Carolina State Univ. (United States)
Michael A. Littlejohn, North Carolina State Univ. (United States)
Y. Zhong, North Carolina State Univ. (United States)

Published in SPIE Proceedings Vol. 1393:
Rapid Thermal and Related Processing Techniques
Rajendra Singh; Mehrdad M. Moslehi, Editor(s)

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