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Proceedings Paper

Multiple photo-assisted CVD of thin-film materials for III-V device technology
Author(s): Yves I. Nissim; Jean Marie Moison; Francoise Houzay; F. Lebland; C. Licoppe; M. Bensoussan
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Paper Abstract

New chemical vapor deposition (CVD) processes controlled by light irradiation are studied and applied to 111-V semiconductor device technology. The interactions between the incident photons of and the gas-substrate system are either photolytic (UV lamps) or pyrolytic (JR lamps). In the first case the process is cold and in the second one it produces fast thermal ramping. The technique is thus compatible in both cases with the fragile semiconductor substrate and it allows in-situ processing. We report here a set ofresults involving surface and interface studies in order to prepare the deposition of thin film materials and thin dielectric film deposition using " flash" CVD or UVCVD. The aim of this work is to propose alternative technologies for Ill-V semiconductors. 1 .

Paper Details

Date Published: 1 April 1991
PDF: 13 pages
Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); doi: 10.1117/12.25707
Show Author Affiliations
Yves I. Nissim, Lab. de Bagneux/CNET (France)
Jean Marie Moison, Lab. de Bagneux/CNET (France)
Francoise Houzay, Lab. de Bagneux/CNET (France)
F. Lebland, Lab. de Bagneux/CNET (France)
C. Licoppe, Lab. de Bagneux/CNET (France)
M. Bensoussan, Lab. de Bagneux/CNET (France)

Published in SPIE Proceedings Vol. 1393:
Rapid Thermal and Related Processing Techniques
Rajendra Singh; Mehrdad M. Moslehi, Editor(s)

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