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Proceedings Paper

Rapid thermal annealing of the through-Ta5Si3 film implantation on GaAs
Author(s): Fon-Shan Huang; W. S. Chen; Tzu-min Hsu
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Paper Abstract

Silicon ion iniplantation on GaAs through tantaluni silicide film is investigated. The rapid thermal annealing is used to activate the dopant and to provide the abrupt shallow junction. After annealing process the carrier mobility ideality factor and barrier height of Ta5Si3/GaAs Schottky diode were measured. The carrier profiles were determined by C-V and differential Hall methods. The Rutherford back scattering and photoreflectance were performed in order to study the interdiffusion and internal field near the surface. Our experiments show the through-film (tantalum silicide)-implantation is the promising process in SAG technology. 1.

Paper Details

Date Published: 1 April 1991
PDF: 8 pages
Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); doi: 10.1117/12.25702
Show Author Affiliations
Fon-Shan Huang, National Tsing-Hua Univ. (Taiwan)
W. S. Chen, National Tsing-Hua Univ. (Taiwan)
Tzu-min Hsu, National Central Univ. (Taiwan)

Published in SPIE Proceedings Vol. 1393:
Rapid Thermal and Related Processing Techniques
Rajendra Singh; Mehrdad M. Moslehi, Editor(s)

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