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Proceedings Paper

High-temperature degradation-free rapid thermal annealing of GaAs and InP
Author(s): Stephen J. Pearton; Avishay Katz; Michael Geva
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Paper Abstract

Rapid thermal annealing of GaAs and InP within enclosed SiC-coated graphite susceptors is shown to eliminate slip formation during implant activation treatments and to provide much better protection against surface degradation at the edges of wafers compared to the more conventional proximity method. Two different types of susceptor were investigated-the first type must be charged with As or P prior to the annealing cycles while the second type incorporates small reservoirs into the susceptor which provide a continuous overpressure of the group V species. Degradation-free annealing of patterned metallized wafers is possible using the latter type of susceptor. The activation of Si and Be implants in GaAs by RTA is also discussed.

Paper Details

Date Published: 1 April 1991
PDF: 11 pages
Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); doi: 10.1117/12.25699
Show Author Affiliations
Stephen J. Pearton, AT&T Bell Labs. (United States)
Avishay Katz, AT&T Bell Labs. (United States)
Michael Geva, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1393:
Rapid Thermal and Related Processing Techniques
Rajendra Singh; Mehrdad M. Moslehi, Editor(s)

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