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Proceedings Paper

Performance and reliability of ultrathin reoxidized nitrided oxides fabricated by rapid thermal processing
Author(s): Atul B. Joshi; G. Q. Lo; Dennis Ku Shih; Dim-Lee Kwong
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Paper Abstract

In this paper we report a systematic and comprehensive study of the chemical and electrical properties of rapid thermally nitrided (RTN) and reoxidized nitrided (RTO) thin oxides and reliability of MOSFETs with these materials as gate dielectrics. The chemical properties of the RTN oxides are studied using AES and VFIR techniques. The nitridation mechanism is discussed and a model is proposed to explain the widely reported nitrogen and oxygen distribution in RTN oxides. Electrical properties of RTN oxides such as dielectric constant conduction mechanism fixed charge and interface state density charge trapping and hot electron and radiation hardness are investigated and are correlated with their chemical characteristics. Post nitridation anneals were performed on the nitrided oxides in 02 d N2 ambients. Charge trapping and hot electron and radiation hardness of the resulting films are studied and compared. Finally the MOSFETs with reoxidized nitrided oxides as gate dielectrics are fabricated and their performance and reliability are studied. 1.

Paper Details

Date Published: 1 April 1991
PDF: 28 pages
Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); doi: 10.1117/12.25696
Show Author Affiliations
Atul B. Joshi, Univ. of Texas/Austin (United States)
G. Q. Lo, Univ. of Texas/Austin (United States)
Dennis Ku Shih, Univ. of Texas/Austin (United States)
Dim-Lee Kwong, Univ. of Texas/Austin (United States)

Published in SPIE Proceedings Vol. 1393:
Rapid Thermal and Related Processing Techniques
Rajendra Singh; Mehrdad M. Moslehi, Editor(s)

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