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AlGaN/GaN open-gate high electron mobility transistors for glucose detection
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Paper Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) have more remarkable properties in application of microwave transistors for high power and high frequency. A less widely studied application is high sensitivity to detect a wide range concentration of glucose. In this work, a photo-electrochemically treated open-gate AlGaN/GaN HEMT biosensor for glucose detection was developed. Through photo-electrochemical treatment, a smooth and thin gallium oxide can be formed on the sensing region. The threshold voltage was changed from -3.3 V to -1.3 V at a swept gain voltage. And a maximum value of transconductance was obtained at the gate voltage of 0 V. Effective functionalization of 3- aminopropyltriethoxysilane (APTES) and immobilization of glucose oxidase (GOx) can be realized on the oxidized sensing region. The proposed sensor exhibited good current response to glucose concentration over a wide linear range with high sensitivity above 8.61 × 105 μA/mM·cm2. The performance of the fabricated biosensor demonstrates the possibility of using AlGaN/GaN HEMTs for high sensitivity glucose detection in biochemical application.

Paper Details

Date Published: 31 December 2019
PDF: 4 pages
Proc. SPIE 11384, Eleventh International Conference on Signal Processing Systems, 113841F (31 December 2019); doi: 10.1117/12.2559688
Show Author Affiliations
Jun Liu, Dalian Univ. of Technology (China)
Hongwei Liang, Dalian Univ. of Technology (China)
Dongyang Xue, Dalian Univ. of Technology (China)
Heqiu Zhang, Dalian Univ. of Technology (China)
Huishi Huang, Xinguanglian Technology Co., Ltd. (China)
Wenping Guo, Shandong Novoshine Co., Ltd. (China)

Published in SPIE Proceedings Vol. 11384:
Eleventh International Conference on Signal Processing Systems
Kezhi Mao, Editor(s)

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