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Influence of the ratio of gate length to source-drain distance on the sensitivity of the AlGaN/GaN HEMT based chemical sensors and biosensors
Author(s): Dongyang Xue; Heqiu Zhang; Hongwei Liang; Jun Liu; Xiaochuan Xia
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Paper Abstract

In this paper, the mechanism of the open-gate AlGaN/GaN HEMT based sensors were discussed and the effect of the ratio of gate length (LG) to source-drain distance (LSD) on the transconductance (gm) of the sensors was investigated. It was shown that the smaller LG/LSD of the devices would get a higher maximum gm (gm-max). However, when the gate voltage (VG) increased to a certain extent, the gm of the larger LG/LSD devices would be higher. The experimental results were demonstrated by further theoretical calculation and analysis which is beneficial to enhance the sensitivity of the AlGaN/GaN HEMT based chemical sensors and biosensors by improving the gm of them.

Paper Details

Date Published: 31 December 2019
PDF: 5 pages
Proc. SPIE 11384, Eleventh International Conference on Signal Processing Systems, 113841E (31 December 2019); doi: 10.1117/12.2559622
Show Author Affiliations
Dongyang Xue, Dalian Univ. of Technology (China)
Heqiu Zhang, Dalian Univ. of Technology (China)
Hongwei Liang, Dalian Univ. of Technology (China)
Jun Liu, Dalian Univ. of Technology (China)
Xiaochuan Xia, Dalian Univ. of Technology (China)


Published in SPIE Proceedings Vol. 11384:
Eleventh International Conference on Signal Processing Systems
Kezhi Mao, Editor(s)

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