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Integrated color centers in arrays of silicon carbide micropillars
Author(s): S. Castelletto; F. A. Inam; A. Boretti; J. M. Bluet
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Paper Abstract

We report the characterization of arrays of micropillars fabricated in an n-type 4H-SiC using photolithography to enhance the emission of bandgap color centers in silicon carbide emitting in the spectral region from 850 nm to 1400 nm. The emission is identified by the mono-vacancy of Si (VSi), silicon and carbon divacancy (VCVSi), and the nitrogenvacancy (NCVSi) using low-temperature micro-photoluminescence. These emitters are created in large ensemble by using ions implantation and annealing at a different temperature to extend the emission in the O-band region. The optical fluorescence enhancement experimental results are obtained using custom made IR confocal microscope to measure integrated PL of up to a factor of 20 compared to bulk material. This enhancement is supported by finite-element simulations considering the non-unity quantum efficiency of the emitters and their broad spectral emission at room temperature. Our study provides the pathway for quantum sensing device design and fabrication with an integrated ultrabright emission for in vivo imaging in the infrared.

Paper Details

Date Published: 30 December 2019
PDF: 4 pages
Proc. SPIE 11200, AOS Australian Conference on Optical Fibre Technology (ACOFT) and Australian Conference on Optics, Lasers, and Spectroscopy (ACOLS) 2019, 112002G (30 December 2019); doi: 10.1117/12.2556256
Show Author Affiliations
S. Castelletto, RMIT Univ. (Australia)
Swinburne Univ. of Technology (Australia)
F. A. Inam, Aligarh Muslim Univ. (India)
A. Boretti, Prince Mohammad Bin Fahd Univ. (Saudi Arabia)
Ton Duc Thang Univ. (Viet Nam)
J. M. Bluet, Univ Lyon, INSA Lyon, INL, CNRS (France)


Published in SPIE Proceedings Vol. 11200:
AOS Australian Conference on Optical Fibre Technology (ACOFT) and Australian Conference on Optics, Lasers, and Spectroscopy (ACOLS) 2019
Arnan Mitchell; Halina Rubinsztein-Dunlop, Editor(s)

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