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Proceedings Paper

Effect of varying facet angle on the strain and energy band profile of InAs QD heterostructures
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Paper Abstract

We have investigated the effects of varying facet angle of the truncated pyramidal QDs on the strain and energy band profile. The conventional truncated QD pyramid has a height of 3 nm with the facet angle of 51˚ along with base and top width of 15 and 11 nm respectively, as observed from the previously reported transmission electron microscopy images. Also, the simulated results were validated with reported experimental data for reliability of our work. Five different angle variations viz. 41˚, 45˚, 51˚, 56˚, 61˚ were considered, referred as structure A, B, C, D and E. It is observed that the magnitude of hydrostatic strain is reduced by 1.22% for the structure E (facet angle of 61˚) and increased by 1.507% for structure A (facet angle of 41˚), when compared with the conventional structure C. Therefore, the carrier confinement would be better in case of structure E as compared to its counterparts. In comparison to structure C, the biaxial strain is 1.39% higher and 2.203% lower in case of structure E and A respectively. Higher biaxial strain would inculcate red shift in emission wavelength because of the movement of heavy-holes upward in energy, which is reflected from the computed photoluminescence peaks. The emission wavelength obtained for structures A, B, C, D and E were approximately 1140, 1151, 1155, 1161 and 1183 nm respectively. Thus, among all, structure E offered longest emission wavelength and optimum strain distribution within the heterostructure.

Paper Details

Date Published: 1 April 2020
PDF: 8 pages
Proc. SPIE 11345, Nanophotonics VIII, 113452Y (1 April 2020); doi: 10.1117/12.2555912
Show Author Affiliations
Ravindra Kumar, Indian Institute of Technology Bombay (India)
Jhuma Saha, Indian Institute of Technology Bombay (India)
Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)


Published in SPIE Proceedings Vol. 11345:
Nanophotonics VIII
David L. Andrews; Angus J. Bain; Martti Kauranen; Jean-Michel Nunzi, Editor(s)

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