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Proceedings Paper

Hot electron generation via internal surface photo-effect in structures with quantum well
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Paper Abstract

It was recently demonstrated in the experiments [1,2] that the internal photoemission efficiency can reach several tens of percents because of “coherent” or, “surface” photoemission. In present work we provide theoretical description of this effect assuming the surface photoemissionin the structureconsisting ofthe Schottky-barrier metal-semiconductor interface with the Quantum Well (QW) inside. We take into account the difference of dielectric permittivities for the metal and the semiconductor which strongly affects the photoemission efficiency. We show that QW inside the Schottky-barrier can lead to (a) lowering the threshold energy of the photoemission due to resonance tunneling of electrons through the intermediate quasi-level of energy in QW; (b) the photoemission efficiency can be increased by several orders of magnitude.

Paper Details

Date Published: 1 April 2020
PDF: 8 pages
Proc. SPIE 11344, Metamaterials XII, 113441X (1 April 2020); doi: 10.1117/12.2555760
Show Author Affiliations
Fedor A. Shuklin, Univ. of Southern Denmark (Denmark)
National Nuclear Research Univ. MEPhI (Russian Federation)
P.N. Lebedev Physical Institute (Russian Federation)
Igor V. Smetanin, P.N. Lebedev Physical Institute (Russian Federation)
Igor E. Protsenko, P.N. Lebedev Physical Institute (Russian Federation)
Jacob B. Khurgin, Johns Hopkins Univ. (United States)
Alexander V. Uskov, P.N. Lebedev Physical Institute (Russian Federation)


Published in SPIE Proceedings Vol. 11344:
Metamaterials XII
Kevin F. MacDonald; Isabelle Staude; Anatoly V. Zayats, Editor(s)

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