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Proceedings Paper

Modeling of oxide semiconductors for power electronic devices (Conference Presentation)
Author(s): Andriy Zakutayev

Paper Abstract

In this talk, I will highlight our recent efforts in modeling Ga2O3 and other oxide materials and devices for application in power electronics. First, I will show the results of techno-economic analysis of the manufacturing cost of Ga2O3 wafers, supporting their projected cost advantage compared to SiC and GaN [1] Next, I will describe finite element analysis of electrical and thermal performance of vertical Ga2O3 transistors reported in literature, comparing MOSFET to FinFET device architectures [2]. Finally, I will summarize the findings of first-principles computational search for wide band gap semiconductors with high figures of merit and large thermal conductivity, highlighting new oxide material candidates for power electronic applications [3]. [1] Joule 3, 1 (2019) [2] ECS Journ. Sol. St. Sci. Tech. 8 Q3202 (2019) [3] Energy Environ. Sci. (2019) DOI: 10.1039/c9ee01529a

Paper Details

Date Published: 10 March 2020
Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810K (10 March 2020); doi: 10.1117/12.2554932
Show Author Affiliations
Andriy Zakutayev, National Renewable Energy Lab. (United States)

Published in SPIE Proceedings Vol. 11281:
Oxide-based Materials and Devices XI
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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