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Proceedings Paper

One metric to rule them all: new k4 definition for photoresist characterization
Author(s): J. G. Santaclara; B. Geh; A. Yen; T. A. Brunner; D. De Simone; J. Severi; G. Rispens
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Paper Abstract

As feature sizes continue to shrink, low-k1 lithographic processes are required to advance chip technologies. In this context, both advances in optical systems and imaging capabilities as well as improvements in EUV photoresist have led to practical gains in resolution. This work focusses on our latest attempt to characterize photoresist performance by a metric that can effectively exclude all other contributors (e.g. scanner) and quantify the true photoresist capabilities. By a cautious analysis of the previous k4 metric for several use cases and resist platforms (chemically amplified vs. metal-oxide resist), we propose an improved formula that incorporates key resist attributes.

Paper Details

Date Published: 14 April 2020
PDF: 10 pages
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113231A (14 April 2020); doi: 10.1117/12.2554493
Show Author Affiliations
J. G. Santaclara, ASML (Netherlands)
B. Geh, Carl Zeiss SMT Inc. (United States)
Carl Zeiss SMT (Germany)
A. Yen, ASML US, Inc. (United States)
T. A. Brunner, ASML US, Inc. (United States)
D. De Simone, IMEC (Belgium)
KU Leuven (Belgium)
J. Severi, IMEC (Belgium)
KU Leuven (Belgium)
G. Rispens, ASML (Netherlands)


Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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