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Proceedings Paper

Compact modeling to predict and correct stochastic hotspots in EUVL
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Paper Abstract

Extreme ultraviolet lithography (EUVL) systems struggle from both low source brightness and low source throughput through the tool. For these reasons, photon shot noise will play a much larger role in image process development for EUVL than in DUV processes. Furthermore, the lower photon count increases the stochastic variation of all the processes which occur after photon absorption. This causes the printed edge to move away from the mean edge with some probability. This paper will present a model form and calibration flow for including stochastic probability bands in compact models suitable for full chip simulation. This model form relies on calibrating to statistical data from a rigorous EUV stochastic lithography model calibrated to wafer experimental data. The data generation, data preparation, and model calibration flows for the compact stochastic probability bands will be presented. We will show that this model form can predict patterns which are prone to stochastic pattern failure in realistic mask designs, as well as how this model form can be used downstream for full chip correction (e.g., SMO, OPC and/or ILT).

Paper Details

Date Published: 23 March 2020
PDF: 8 pages
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 1132324 (23 March 2020);
Show Author Affiliations
Zachary Levinson, Synopsys, Inc. (United States)
Yudhishthir Kandel, Synopsys, Inc. (United States)
Yunqiang Zhang, Synopsys, Inc. (United States)
Qiliang Yan, Synopsys, Inc. (United States)
Makoto Miyagi, Synopsys, Inc. (United States)
Xiaohai Li, Synopsys, Inc. (United States)
Kevin Lucas, Synopsys, Inc. (United States)


Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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