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Proceedings Paper

Ellipsometric studies and scanning electron microscopy of Cd1-xMn xTe films and layers modified by laser irradiation
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Paper Abstract

The graphical-analytical method was used to find the solution of the inverse problem in ellipsometry for the system consisting of a transparent single-layer dielectric film on the Cd1-xMnxTe crystal substrate. The nomograms in the φ-Δ ellipsometric coordinates were simulated to determine the refractive index of the film and its thickness for different incidence angles of the laser beam with 632.8 nm wavelength. The treatment of the Cd1-xMnxTe (х=0.1-0.4) thin films and crystal surfaces was carried out with the millisecond (τ=1.5 ms) and nanosecond (τ=80 ns) laser. The structuralphase transformations of the films and layers in the Cd-Mn-Te system were studied in the AFM and SEM, and their ellipsometric characteristics were determined using photometric laser ellipsometer. The heterogeneity of the thickness and structure of the laser-modified Cd1-xMnxTe surface layers were analyzed using calculated distribution of the refractive index of the films and its dependence on the incidence angle of the laser beam.

Paper Details

Date Published: 6 February 2020
PDF: 8 pages
Proc. SPIE 11369, Fourteenth International Conference on Correlation Optics, 113691E (6 February 2020);
Show Author Affiliations
V. M. Strebezhev, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
I. M. Yuriychuk, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
P. M. Fochuk, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
V. V. Strebezhev, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
V. G. Pylypko, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
M. O. Sorokatyi, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)


Published in SPIE Proceedings Vol. 11369:
Fourteenth International Conference on Correlation Optics
Oleg V. Angelsky, Editor(s)

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