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Proceedings Paper

Elemental device technologies developed for lateral Ga2O3 metal-oxide-semiconductor field-effect transistors (Conference Presentation)
Author(s): Masataka Higashiwaki; Takafumi Kamimura; Yoshiaki Nakata

Paper Abstract

In this talk, we will present two elemental device technologies developed for lateral Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs). One is nitrogen doping to a Ga2O3 channel layer to realize normally-off operation of Ga2O3 MOSFETs, and the other is an (AlGa)2O3 back barrier to shift a threshold gate voltage of Ga2O3 MOSFETs with a Si-implanted channel toward the positive voltage side.

Paper Details

Date Published: 10 March 2020
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Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810N (10 March 2020); doi: 10.1117/12.2553903
Show Author Affiliations
Masataka Higashiwaki, National Institute of Information and Communications Technology (Japan)
Takafumi Kamimura, National Institute of Information and Communications Technology (Japan)
Yoshiaki Nakata, National Institute of Information and Communications Technology (Japan)


Published in SPIE Proceedings Vol. 11281:
Oxide-based Materials and Devices XI
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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