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Proceedings Paper

Optical absorption in gallium and indium oxide (Conference Presentation)
Author(s): Hartwin Peelaers

Paper Abstract

Ga2O3 is a wide-band-gap oxide, with promising properties suitable for high-power devices and UV photodetectors. The latter requires combining transparency with conductivity, which are properties usually not occurring together. We use first-principles calculations to accurately define the fundamental transparency limits of Ga2O3, by considering both indirect and direct free-carrier absorption. These results also shed light on recent experimental observations. We will also discuss absorption in In2O3, as Sn-doped In2O3 (ITO) is the most widely used transparent conducting oxide, and explain what makes it such a good material. Work performed in collaboration with E. Kioupakis and C.G. Van de Walle.

Paper Details

Date Published: 10 March 2020
Proc. SPIE 11281, Oxide-based Materials and Devices XI, 1128107 (10 March 2020);
Show Author Affiliations
Hartwin Peelaers, The Univ. of Kansas (United States)

Published in SPIE Proceedings Vol. 11281:
Oxide-based Materials and Devices XI
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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