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Proceedings Paper

An application study on the stochastic effect of EUV photons
Author(s): Jongsu Kim; Hyekyoung Jue; Hyungju Ryu; Sang-Jin Kim; Joon-Soo Park; Kyoungsub Shin; Ulrich Welling; Jürgen Preuninger; Ulrich Klostermann; Hans-Jürgen Stock; Wolfgang Demmerle; Eun-Soo Jeong; Sang-Yil Chang; Jung-Hoe Choi
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Paper Abstract

For the past years, ArF immersion has been employed as the major lithography tool in the foundry manufacturing to fabricate the patterns of minimum pitch and size. However, for semiconductor scaling beyond N7 the application of EUV lithography is considered to be crucially important to overcome the physical limitation of ArF immersion and to realize even smaller patterns. In the case of ArF photo processes, the best mask size for a specific pitch could be selected with the consideration of optical performances such as NILS, MEEF, etc. In contrast, for the EUV processes the optical and resist stochastic effect should also be taken into account as an important factor in deciding the best mask size. In this paper, we are going to discuss the dose and mask size optimization process for an DRAM contact hole layer with EUV lithography utilizing stochastic simulations; this contains also the stochastic response of the resist. In order to calibrate a predictive stochastic resist model, which is required for this application, measurements of the stochastic resist response are necessary. In addition, the systematic and stochastic errors of CD-SEM measurements have to be estimated. We will compare experimentally obtained NILS and MEEF to simulated results, which are in very good agreement. Also, we show a comparison of experimental and computational analysis of LCDU (Local CD Uniformity).

Paper Details

Date Published: 15 May 2020
PDF: 8 pages
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113231E (15 May 2020);
Show Author Affiliations
Jongsu Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hyekyoung Jue, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hyungju Ryu, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sang-Jin Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Joon-Soo Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Kyoungsub Shin, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Ulrich Welling, Synopsys GmbH (Germany)
Jürgen Preuninger, Synopsys GmbH (Germany)
Ulrich Klostermann, Synopsys GmbH (Germany)
Hans-Jürgen Stock, Synopsys GmbH (Germany)
Wolfgang Demmerle, Synopsys GmbH (Germany)
Eun-Soo Jeong, Synopsys Korea Inc. (Korea, Republic of)
Sang-Yil Chang, Synopsys Korea Inc. (Korea, Republic of)
Jung-Hoe Choi, Synopsys Korea Inc. (Korea, Republic of)


Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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