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Proceedings Paper

Electron mobility from phonon scattering in degenerate semiconductors: ZnO, [beta]-Ga2O3, and ZnGa2O4 (Conference Presentation)
Author(s): David C. Look; Kevin D. Leedy; Ray-Hua Horng; Stefan C. Badescu; Marco D. Santia

Paper Abstract

We have employed the framework of quantum magnetoconductivity to develop an experimental method of directly measuring the mobility µph representing inelastic electron-phonon scattering at a given temperature T. Further, we relate µph to material parameters via an equation µph(T) = function(T,Tph,m*,eps-0,eps-inf), where m* is the effective mass, eps-0 and eps-inf are the static and high-frequency dielectric constants, and kTph is an effective phonon energy that represents all the phonon interactions contributing to µph at temperature T. We apply this methodology to an “old” material ZnO; an exciting “new” material, β-Ga2O3; and a combination of the two, ZnGa2O4.

Paper Details

Date Published: 10 March 2020
Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810R (10 March 2020);
Show Author Affiliations
David C. Look, Wright State Univ. (United States)
Kevin D. Leedy, Air Force Research Lab. (United States)
Ray-Hua Horng, National Chiao Tung Univ. (Taiwan)
Stefan C. Badescu, Air Force Research Lab. (United States)
Marco D. Santia, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 11281:
Oxide-based Materials and Devices XI
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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