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Proceedings Paper

Photosensitive heterostructure p-Сu2ZnSnSe4/n-CdTe
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Paper Abstract

The conditions for the production of rectifying heterostructures p-Сu2ZnSnSe4/n-CdTe by the method of RF-magnetron sputtering of Сu2ZnSnSe4 films onto crystalline substrates n-CdTe were investigated. Mechanisms of forming direct and reverse currents through the heterojunction were set based on the analysis of temperature dependences of I-V characteristics. It is established that the heterostructure generates idle voltage VOC = 0.42 V, short-circuit current ISC = 0.175 mA/cm2 and the fill factor FF = 0.4 when illuminated at 80 mW/cm2.

Paper Details

Date Published: 6 February 2020
PDF: 8 pages
Proc. SPIE 11369, Fourteenth International Conference on Correlation Optics, 113691B (6 February 2020);
Show Author Affiliations
Eduard V. Maistruk, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
Ivan P. Koziarskyi, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
Dmytro P. Koziarskyi, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
Galyna O. Andrushchak, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)


Published in SPIE Proceedings Vol. 11369:
Fourteenth International Conference on Correlation Optics
Oleg V. Angelsky, Editor(s)

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