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Proceedings Paper

Heterostructures on the basis of thin films (3ZnTe)0.5(In2Te3)0.5
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Paper Abstract

The results of investigation of optical and electrical properties of thin films of р-(3ZnTe)0.5(In2Te3)0.5 obtained by thermal evaporation and heterostructures based on them are presented in the paper. On the basis of the analysis of the spectra of light absorption, the optical width of the band gap and its dependence on the sputtering mode is determined. The heterostructures of n-Si/p-(3ZnTe)0.5(In2Te3)0.5 and n-CdTe/p-(3ZnTe)0.5(In2Te3)0.5 were obtained and they have straightening properties. Based on the analysis of the temperature dependences of the I-V characteristics, the presence of a tunneling mechanism of electron motion at forward and reverse bias through the energy barrier of the heterojunction is established.

Paper Details

Date Published: 6 February 2020
PDF: 9 pages
Proc. SPIE 11369, Fourteenth International Conference on Correlation Optics, 113691A (6 February 2020);
Show Author Affiliations
Ivan P. Koziarskyi, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
Eduard V. Maistruk, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
Dmytro P. Koziarskyi, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
Galyna O. Andrushchak, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
Taras T. Kovaliuk, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)


Published in SPIE Proceedings Vol. 11369:
Fourteenth International Conference on Correlation Optics
Oleg V. Angelsky, Editor(s)

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